BSC079N10NS G Infineon Technologies, BSC079N10NS G Datasheet
BSC079N10NS G
Manufacturer Part Number
BSC079N10NS G
Description
MOSFET N-CH 100V 100A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC079N10NS_G.pdf
(10 pages)
Specifications of BSC079N10NS G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.9 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 110µA
Gate Charge (qg) @ Vgs
87nC @ 10V
Input Capacitance (ciss) @ Vds
5900pF @ 50V
Power - Max
156W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
6.6mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0079 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13.4 A
Power Dissipation
156 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000379590
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BSC079N10NS G Summary of contents
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