IPP600N25N3 G Infineon Technologies, IPP600N25N3 G Datasheet
IPP600N25N3 G
Manufacturer Part Number
IPP600N25N3 G
Description
MOSFET N-CH 250V 25A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB600N25N3_G.pdf
(11 pages)
Specifications of IPP600N25N3 G
Package / Case
TO-220-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
4V @ 90µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
2350pF @ 100V
Power - Max
136W
Mounting Type
Through Hole
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
60 mOhms
Forward Transconductance Gfs (max / Min)
47 S, 24 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
25 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPP600N25N3GXK
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IPP600N25N3 G Summary of contents
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