IPP100N08S2L-07 Infineon Technologies, IPP100N08S2L-07 Datasheet - Page 7

• Manufacturer Part Number: IPP100N08S2L-07
• Description: MOSFET N-CH 75V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N08S2L-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 246nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0068 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000219052

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
900
800
700
600
500
400
300
200
100
= f(T
0
86
81
76
71
66
25
-60
= f(T
j
)
D
j
=80A
); I
-20
D
= 1 mA
75
20
T
T
j
j
60
[°C]
[°C]
125
100
140
180
175
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
DD
D
40
= 100 A pulsed
Q
Q
g
g
80
Q
Q
Q
gate
gd
gd
[nC]
IPB100N08S2L-07
IPP100N08S2L-07
120
Q
Q
15V
gate
gate
160
2006-03-03
60V
200