BSC600N25NS3 G Infineon Technologies, BSC600N25NS3 G Datasheet

MOSFET N-CH 250V 25A TDSON-8

BSC600N25NS3 G

Manufacturer Part Number
BSC600N25NS3 G
Description
MOSFET N-CH 250V 25A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSC600N25NS3 G

Package / Case
8-TSDSON
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
4V @ 90µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
2350pF @ 100V
Power - Max
125W
Mounting Type
Surface Mount
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
60 mOhms
Forward Transconductance Gfs (max / Min)
49 S, 25 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
25 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSC600N25NS3 G
BSC600N25NS3 GTR
Features
Maximum ratings,
Parameter
Type
Package
Marking
TM
3 Power-Transistor
T
R
R
Symbol Conditions
I
I
E
V
P
T T
T
T
T
I
T
R
Product Summary
V
R
I
Value
BSC600N25NS3 G
Unit

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BSC600N25NS3 G Summary of contents

Page 1

... TM 3 Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions BSC600N25NS3 G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions BSC600N25NS3 G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode Symbol Conditions BSC600N25NS3 G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 140 120 100 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance BSC600N25NS3 G 50 100 150 200 T [° [ ...

Page 5

... Typ. output characteristics [ Typ. transfer characteristics [ Typ. drain-source on resistance 100 Typ. forward transconductance BSC600N25NS3 [ [ ...

Page 6

... Drain-source on-state resistance 180 160 140 120 100 -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode 120 160 BSC600N25NS3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics 100 [µ Drain-source breakdown voltage 280 270 260 250 240 230 220 -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 BSC600N25NS3 [nC] gate ate ...

Page 8

... PG-TDSON-8: Outline BSC600N25NS3 G ...

Page 9

... BSC600N25NS3 G ...

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