IPW90R1K0C3 Infineon Technologies, IPW90R1K0C3 Datasheet

MOSFET N-CH 900V 5.7A TO-247

IPW90R1K0C3

Manufacturer Part Number
IPW90R1K0C3
Description
MOSFET N-CH 900V 5.7A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW90R1K0C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 3.3A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
3.5V @ 370µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 100V
Power - Max
89W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
5.7A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
1 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Power Dissipation
89 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000413752

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW90R1K0C3
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPW90R1K0C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IPW90R1K0C3
Quantity:
2 400
Rev. 1.0
Features
• Lowest figure-of-merit R
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
IPW90R1K0C3
Power Transistor
2)
Package
PG-TO247
J
=25 °C, unless otherwise specified
ON
x Q
AR
AR
1)
g
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
Marking
9R1K0C
J
AS
AR
GS
tot
, T
stg
T
T
T
I
I
V
static
AC (f>1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=1.1 A, V
=1.1 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...400 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
@ T
J
=25°C
@ T
J
= 25°C
-55 ... 150
Value
0.37
±20
±30
5.7
3.6
1.1
12
97
50
89
60
PG-TO247
IPW90R1K0C3
900
1.0
34
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2008-07-29

Related parts for IPW90R1K0C3

IPW90R1K0C3 Summary of contents

Page 1

... D,pulse =1 = 2 2), =0...400 static GS AC (f>1 Hz =25 °C tot stg M3 and M3.5 screws page 1 IPW90R1K0C3 @ T =25°C 900 25°C 1.0 DS(on),max J 34 g,typ PG-TO247 Value 5.7 3 0.37 1.1 50 ±20 ±30 89 -55 ... 150 Unit V/ °C Ncm 2008-07-29 ...

Page 2

... =0.37 mA GS(th =900 DSS T =25 ° =900 =150 ° = GSS = =3 DS(on) T =25 ° = =3 =150 ° MHz, open drain G page 2 IPW90R1K0C3 Value Unit 3 V/ns Values Unit min. typ. max 1.4 K 260 °C 900 - - V 2 µ 100 1.3 - 2008-07-29 ...

Page 3

... R =62.4 d(off =400 plateau =3 =25 ° =400 /dt =100 A/µ rrm =400V, V < <T , identical low side and high side switch peak (BR)DSS J J,max oss oss page 3 IPW90R1K0C3 Values min. typ. max. - 850 - - 100 - - 400 - - =3 tbd - 4 0.8 1.2 - 340 - , *f. AV ...

Page 4

... Rev. 1.0 2 Safe operating area I =f parameter 100 125 150 1 [° Typ. output characteristics I =f parameter [s] p page 4 IPW90R1K0C3 ); T =25 ° limited by on-state resistance 10 µs 100 µ 100 V [ =25 ° µs 1000 2008-07-29 ...

Page 5

... DS J parameter Drain-source on-state resistance DS(on 2 typ 0.5 0 -60 - Rev. 1.0 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter Typ. transfer characteristics = =f parameter 100 140 180 0 [°C] j page 5 IPW90R1K0C3 ); T =150 ° 4 ≥20V °C 150 ° [ 2008-07-29 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 400 V 720 [nC] gate 12 Drain-source breakdown voltage V =f(T BR(DSS) 1050 1000 950 900 850 800 100 125 150 -60 [°C] J page 6 IPW90R1K0C3 ) J 25 °C, 98% 150 °C, 98% 25 °C 150 °C 0 0.5 1 1 =0. - 100 140 T [° 180 2008-07-29 ...

Page 7

... Typ. capacitances C =f MHz DS GS 10000 Ciss 1000 100 Coss 10 Crss 1 0 100 200 V Rev. 1.0 14 Typ f(V oss 300 400 500 600 0 [V] DS page 7 IPW90R1K0C3 stored energy oss ) DS 100 200 300 400 500 V [V] DS 600 2008-07-29 ...

Page 8

... Definition of diode switching characteristics Rev. 1.0 page 8 IPW90R1K0C3 2008-07-29 ...

Page 9

... PG-TO247 Outlines Dimensions in mm/inches Rev. 1.0 page 9 IPW90R1K0C3 2008-07-29 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 IPW90R1K0C3 2008-07-29 ...

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