IPW60R299CP Infineon Technologies, IPW60R299CP Datasheet
![MOSFET N-CH 650V 11A TO-247](/photos/5/53/55366/448-to-247_sml.jpg)
IPW60R299CP
Manufacturer Part Number
IPW60R299CP
Description
MOSFET N-CH 650V 11A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPW60R299CP.pdf
(11 pages)
Specifications of IPW60R299CP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.5V @ 440µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 100V
Power - Max
96W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.299 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
96 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPW60R299CPX
IPW60R299CPXK
SP000103251
IPW60R299CPXK
SP000103251
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPW60R299CP
Manufacturer:
INFINEON
Quantity:
10 140
Company:
Part Number:
IPW60R299CP
Manufacturer:
IR
Quantity:
12 500
Part Number:
IPW60R299CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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IPW60R299CP Summary of contents
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... Infineon Technologies failure of such components can reasonably be expected to approval of Infineon Technologies failure of such components can reasonably be expected to ...
Page 11
New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...