IPW60R299CP Infineon Technologies, IPW60R299CP Datasheet

MOSFET N-CH 650V 11A TO-247

IPW60R299CP

Manufacturer Part Number
IPW60R299CP
Description
MOSFET N-CH 650V 11A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPW60R299CP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.5V @ 440µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 100V
Power - Max
96W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.299 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
96 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPW60R299CPX
IPW60R299CPXK
SP000103251

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW60R299CP
Manufacturer:
INFINEON
Quantity:
10 140
Part Number:
IPW60R299CP
Manufacturer:
IR
Quantity:
12 500
Part Number:
IPW60R299CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000

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IPW60R299CP Summary of contents

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... Infineon Technologies failure of such components can reasonably be expected to approval of Infineon Technologies failure of such components can reasonably be expected to ...

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New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...

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