IPP034NE7N3 G Infineon Technologies, IPP034NE7N3 G Datasheet
IPP034NE7N3 G
Manufacturer Part Number
IPP034NE7N3 G
Description
MOSFET N-CH 75V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPI034NE7N3_G.pdf
(10 pages)
Specifications of IPP034NE7N3 G
Package / Case
TO-220-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.4 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
3.8V @ 155µA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
8130pF @ 37.5V
Power - Max
214W
Mounting Type
Through Hole
Gate Charge Qg
88 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.4 mOhms
Forward Transconductance Gfs (max / Min)
150 S, 75 S
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
214 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPP034NE7N3GXK
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IPP034NE7N3 G Summary of contents
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