IPB60R165CP Infineon Technologies, IPB60R165CP Datasheet

MOSFET N-CH 650V 21A D2PAK

IPB60R165CP

Manufacturer Part Number
IPB60R165CP
Description
MOSFET N-CH 650V 21A D2PAK
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPB60R165CP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
165 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
3.5V @ 790µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
2000pF @ 100V
Power - Max
192W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
165mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.165 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
192 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPB60R165CPXT
SP000096439

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPB60R165CP
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
IPB60R165CP
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 2.1
Features
• Lowest figure-of-merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching topologies for Server and Telecom
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
CoolMOS
Type
IPB60R165CP
®
Power Transistor
2)
Package
PG-TO263
j
=25 °C, unless otherwise specified
ON
xQ
AR
AR
g
1)
2),3)
2),3)
for target applications
Symbol Conditions
Ordering Code
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
SP000096439
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
D
D
page 1
C
C
C
C
DS
=7.9 A, V
=7.9 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...480 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
Marking
6R165P
@ T
j,max
-55 ... 150
Value
0.79
522
±20
±30
192
7.9
21
13
61
50
PG-TO263
IPB60R165CP
0.165 Ω
650
39
Unit
A
mJ
A
V/ns
V
W
°C
V
nC
2009-06-05

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IPB60R165CP Summary of contents

Page 1

... =100 ° =25 ° D,pulse 2), 2), =0...480 static >1 Hz) =25 ° tot stg page 1 IPB60R165CP @ T 650 DS j,max 0.165 Ω DS(on),max 39 g,typ PG-TO263 Marking 6R165P Value 522 0.79 7.9 50 ±20 ±30 192 -55 ... 150 V nC Unit V/ °C 2009-06-05 ...

Page 2

... GS(th =600 DSS =25 ° =600 =150 ° = GSS DS(on) =25 ° = = =150 ° MHz, open drain R G page 2 IPB60R165CP Value Unit V/ns Values Unit min. typ. max 0.65 K 260 °C 600 - - V 2 µ 100 nA 0.165 Ω - 0.15 - 0.40 - Ω - 1.9 ...

Page 3

... R d(off =400 plateau = = =25 ° =400 /dt =100 A/µ rrm < <T , identical low side and high side switch. peak (BR)DSS j jmax while V oss while V oss page 3 IPB60R165CP Values Unit min. typ. max. - 2000 - pF - 100 - - 220 - - 13 5 0.9 1 390 - ns - 7.5 - µ ...

Page 4

... Max. transient thermal impedance Z =f(t ) thJC p parameter: D 0.5 0 0.1 0.05 0.02 0.01 single pulse - Rev. 2.1 2 Safe operating area =f parameter 120 160 [° Typ. output characteristics =f parameter [s] p page 4 IPB60R165CP ); T =25 ° limited by on-state resistance 10 µs 100 µ [ =25 ° µ 10V 25 2007-11-22 ...

Page 5

... T Rev. 2.1 6 Typ. drain-source on-state resistance =f(I R DS(on) parameter 0.8 5 0.4 4 Typ. transfer characteristics =f parameter: T 100 typ 100 140 180 [°C] j page 5 IPB60R165CP ); T =150 ° 6 [A] D |>2 DS(on)max j C °25 C °150 [ 2007-11-22 ...

Page 6

... Rev. 2.1 10 Forward characteristics of reverse diode =f parameter 120 400 [nC] 12 Drain-source breakdown voltage =f(T V BR(DSS) 700 660 620 580 540 100 140 180 -60 [°C] j page 6 IPB60R165CP j 25 °C, 98% 150 °C, 98% 25 °C 150 °C 0.5 1 1 =0. - 100 140 T [° 180 2007-11-22 ...

Page 7

... Typ. capacitances C =f MHz Ciss 3 10 Coss Crss 100 200 V Rev. 2.1 14 Typ. Coss stored energy = f(V E oss 300 400 500 0 [V] DS page 7 IPB60R165CP ) 100 200 300 400 500 V [V] DS 600 2007-11-22 ...

Page 8

... Definition of diode switching characteristics Rev. 2.1 page 8 IPB60R165CP 2007-11-22 ...

Page 9

... PG-TO263-3-2/TO-263-3-5/TO263-3-22: Outlines Dimensions in mm/inches Rev. 2.1 page 9 IPB60R165CP 2007-11-22 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 IPB60R165CP 2007-11-22 ...

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