IPI70N10SL-16 Infineon Technologies, IPI70N10SL-16 Datasheet - Page 3

MOSFET N-CH 100V 70A TO262-3

IPI70N10SL-16

Manufacturer Part Number
IPI70N10SL-16
Description
MOSFET N-CH 100V 70A TO262-3
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of IPI70N10SL-16

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
2V @ 2mA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
4540pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
16 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000225705

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPI70N10SL-16
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPI70N10SL-16
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
j
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
V
t
Q
= 25 °C, unless otherwise specified
d(on)
r
d(off)
f
S
SM
rr
fs
(plateau) V
SD
iss
oss
rss
gs
gd
g
rr
V
I
V
f =1MHz
V
I
V
V
V
T
V
V
d i
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
=50A
=70A, R
=25°C
=50V, I
/d t =100A/µs
≥2*I
=0V, V
=50V, V
=80V, I
=80V, I
=0 to 10V
=80V, I
=0V, I
Conditions
D
*R
F =
G
F
DS
D
D
D
=140A
=1.3Ω
DS(on)max
GS
l
S
=70A
=70A,
=70A
=25V,
,
=4.5V,
IPP70N10SL-16, IPB70N10SL-16
,
min.
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3630
3.22
typ.
640
345
250
250
160
100
600
1.2
65
70
95
10
34
-
-
IPI70N10SL-16
2006-02-14
max.
4540
800
430
105
375
375
145
240
280
150
900
1.8
15
51
70
-
-
Unit
S
pF
ns
nC
V
A
V
ns
nC

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