IPP90R800C3 Infineon Technologies, IPP90R800C3 Datasheet

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IPP90R800C3

Manufacturer Part Number
IPP90R800C3
Description
MOSFET N-CH 900V 6.9A TO-220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPP90R800C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
6.9A
Vgs(th) (max) @ Id
3.5V @ 460µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 100V
Power - Max
104W
Mounting Type
Through Hole
Package / Case
TO-220-2
Transistor Polarity
N Channel
Continuous Drain Current Id
6.9A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000413748

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP90R800C3
Manufacturer:
DANFOSS
Quantity:
21
Part Number:
IPP90R800C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
Features
• Lowest figure-of-merit R
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
IPP90R800C3
Power Transistor
2)
Package
PG-TO220
J
=25 °C, unless otherwise specified
ON
x Q
AR
AR
1)
g
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
Marking
9R800C
J
AS
AR
GS
tot
, T
stg
T
T
T
I
I
V
static
AC (f>1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=1.4 A, V
=1.4 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...400 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
@ T
J
=25°C
@ T
J
= 25°C
-55 ... 150
Value
0.46
157
±20
±30
104
6.9
4.4
1.4
15
50
60
PG-TO220
IPP90R800C3
900
0.8
42
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2008-07-30

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IPP90R800C3 Summary of contents

Page 1

... 2 2), =0...400 static GS AC (f>1 Hz =25 °C tot stg M3 and M3.5 screws page 1 IPP90R800C3 @ T =25°C 900 25°C 0.8 DS(on),max J 42 g,typ PG-TO220 Value 6.9 4.4 15 157 0.46 1.4 50 ±20 ±30 104 -55 ... 150 Unit V/ °C Ncm 2008-07-30 ...

Page 2

... I =0.46 mA GS(th =900 DSS T =25 ° =900 =150 ° = GSS = =4 DS(on) T =25 ° = =4 =150 ° MHz, open drain G page 2 IPP90R800C3 Value Unit 4 V/ns Values Unit min. typ. max 1.2 K 260 °C 900 - - V 2 µ 100 nA - 0.62 0 1.3 - 2008-07-30 ...

Page 3

... =50 d(off =400 plateau =4 =25 ° =400 /dt =100 A/µ rrm =400V, V < <T , identical low side and high side switch peak (BR)DSS J J,max oss oss page 3 IPP90R800C3 Values min. typ. max. - 1100 - - 130 - - 400 - - =4 tbd - 4 0.8 1.2 - 360 - , while V is rising from DSS ...

Page 4

... Rev. 1.0 2 Safe operating area I =f parameter 100 125 150 [° Typ. output characteristics I =f parameter [s] p page 4 IPP90R800C3 ); T =25 ° limited by on-state resistance 10 µs 100 µ 100 V [ =25 ° µs 1000 25 2008-07-30 ...

Page 5

... parameter Drain-source on-state resistance DS(on 2 typ 0.5 0 -60 - Rev. 1.0 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 4 [ Typ. transfer characteristics = =f parameter 100 140 180 0 [°C] J page 5 IPP90R800C3 ); T =150 ° 4 =20V °C 150 ° [ 2008-07-30 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 720 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 1050 1000 950 900 850 800 100 125 150 -60 [°C] J page 6 IPP90R800C3 J 25 °C, 98% 150 °C, 98% 25 °C 150 °C 0.5 1 1 =0. - 100 140 T [° 180 2008-07-30 ...

Page 7

... Typ. capacitances C =f MHz DS GS 10000 Ciss 1000 100 Coss 10 Crss 1 0 100 200 V Rev. 1.0 14 Typ f(V oss 300 400 500 600 0 [V] DS page 7 IPP90R800C3 stored energy oss ) DS 100 200 300 400 500 V [V] DS 600 2008-07-30 ...

Page 8

... Definition of diode switching characteristics Rev. 1.0 page 8 IPP90R800C3 2008-07-30 ...

Page 9

... PG-TO220 Outlines Dimensions in mm/inches Rev. 1.0 page 9 IPP90R800C3 2008-07-30 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 IPP90R800C3 2008-07-30 ...

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