IPA50R140CP Infineon Technologies, IPA50R140CP Datasheet

MOSFET N-CH 550V 23A TO220-3

IPA50R140CP

Manufacturer Part Number
IPA50R140CP
Description
MOSFET N-CH 550V 23A TO220-3
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPA50R140CP

Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
3.5V @ 930µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
2540pF @ 100V
Power - Max
34W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Power Dissipation
34000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
23A
Drain Source Voltage Vds
550V
On Resistance Rds(on)
140mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000234988

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPA50R140CP
Manufacturer:
IXYS
Quantity:
6 000
Part Number:
IPA50R140CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
CoolMOS
Features
CoolMOS CP is designed for:
Maximum ratings,
Parameter
Type
v t
TM
Power Transistor
T
Package
t
t
Symbol Conditions
I
I
E
E
I
V
P
T T
v t
Marking
T
T
T
I
I
V
T
V
V
Product Summary
V
R
Q
Value
IPA50R140CP
Unit

Related parts for IPA50R140CP

IPA50R140CP Summary of contents

Page 1

... TM CoolMOS Power Transistor Features CoolMOS CP is designed for: Type Package Maximum ratings, T Parameter Product Summary Marking Symbol Conditions IPA50R140CP Value Unit ...

Page 2

... Maximum ratings, T Parameter v t Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions Symbol Conditions IPA50R140CP Value Unit Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode Symbol Conditions IPA50R140CP Values Unit min. typ. max ...

Page 4

... Power dissipation [° Max. transient thermal impedance D [ Safe operating area 100 150 4 Typ. output characteristics IPA50R140CP [ [ ...

Page 5

... Typ. output characteristics [ Drain-source on-state resistance 0.35 0.3 0.25 0.2 0.15 0.1 0.05 -60 - [° Typ. drain-source on-state resistance 0.8 0.7 0.6 0.5 0.4 0.3 0 Typ. transfer characteristics 120 150 180 0 IPA50R140CP [ [ ...

Page 6

... Typ. gate charge [nC] gate 11 Avalanche energy 700 600 500 400 300 200 100 [° Forward characteristics of reverse diode Drain-source breakdown voltage V T 580 560 540 520 500 480 460 440 -60 125 175 IPA50R140CP 0.5 1 1 100 140 T [° 180 ...

Page 7

... Typ. capacitances 100 200 V [ Typ. Coss stored energy 300 400 500 0 IPA50R140CP 100 200 300 400 V [V] DS 500 ...

Page 8

... Definition of diode switching characteristics IPA50R140CP ...

Page 9

... PG-TO220-3-31: Outline / Fully isolated package (2500VAC; 1minute) IPA50R140CP ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPA50R140CP ...

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