IPI05CN10N G Infineon Technologies, IPI05CN10N G Datasheet - Page 5

• Manufacturer Part Number: IPI05CN10N G
• Description: MOSFET N-CH 100V 100A TO262-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPI05CN10N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 181nC @ 10V
• Input Capacitance (ciss) @ Vds: 12000pF @ 50V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 4.1mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000208922; SP000680664

5 Typ. output characteristics
I
7 Typ. transfer characteristics
I
V
V
400
320
240
160
300
250
200
150
100
80
50
0
0
0
0
T
V
V
T
1
I R
2
2
V
V
DS
GS
4
[V]
[V]
3
6
4
5
8
6 Typ. drain-source on resistance
R
8 Typ. forward transconductance
g
200
160
120
I
15
12
80
40
9
6
3
0
0
0
0
I
T
V
T
IPB05CN10N G
50
50
I
I
D
D
[A]
[A]
100
100
IPP05CN10N G
IPI05CN10N G
150
150