IPB038N12N3 G Infineon Technologies, IPB038N12N3 G Datasheet - Page 3

• Manufacturer Part Number: IPB038N12N3 G
• Description: MOSFET N-CH 120V 120A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB038N12N3 G

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 211nC @ 10V
• Input Capacitance (ciss) @ Vds: 13800pF @ 60V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Gate Charge Qg: 158 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.8 mOhms
• Forward Transconductance Gfs (max / Min): 165 S, 83 S
• Drain-source Breakdown Voltage: 120 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB038N12N3 G; IPB038N12N3 GTR

Rev. 2.2
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
sw
g
oss
rr
V
f =1 MHz
V
I
V
I
V
V
T
V
T
V
di
D
D
page 3
C
j
GS
DD
DD
GS
DD
GS
R
=100 A, R
=100 A,
=25 °C
F
=25 °C
=60 V, I
/dt =100 A/µs
=0 V, V
=60 V, V
=60.1 V,
=0 to 10 V
=60.1 V, V
=0 V, I
F
F
DS
=100 A,
=I
G
GS
=1.6
=60 V,
S
GS
=10 V,
,
=0 V
IPP041N12N3 G
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
10400
1320
52.0
typ.
158
182
123
356
5.0
0.9
61
35
70
21
52
37
58
-
-
IPB038N12N3 G
IPI041N12N3 G
13800 pF
max.
1760
211
243
120
480
1.2
-
-
-
-
-
-
-
-
-
-
Unit
ns
nC
V
nC
A
V
ns
nC
2009-07-16