IPP60R125C6 Infineon Technologies, IPP60R125C6 Datasheet - Page 18
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IPP60R125C6
Manufacturer Part Number
IPP60R125C6
Description
MOSFET N-CH 600V 30A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPP60R125C6.pdf
(18 pages)
Specifications of IPP60R125C6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 14.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
3.5V @ 960µA
Gate Charge (qg) @ Vgs
96nC @ 10V
Input Capacitance (ciss) @ Vds
2127pF @ 100V
Power - Max
219W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.11ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-220
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP60R125C6
Manufacturer:
INFINEON
Quantity:
12 000
component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered