SPP21N50C3 Infineon Technologies, SPP21N50C3 Datasheet - Page 7

• Manufacturer Part Number: SPP21N50C3
• Description: MOSFET N-CH 560V 21A TO-220AB
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP21N50C3

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013832; SPP21N50C3IN; SPP21N50C3X; SPP21N50C3XK; SPP21N50C3XTIN; SPP21N50C3XTIN

9 Typ. drain-source on resistance
R
parameter: T
11 Typ. transfer characteristics
I
parameter: t
Rev. 3.2
D
DS(on)
= f ( V
1.5
Ω
0.9
0.6
0.3
A
70
50
40
30
20
10
0
0
0
=f(I
GS
D
5
); V
p
)
j
=150°C, V
2
= 10 µs
10
DS
≥ 2 x I
Tj = 25°C
15
4
GS
20
D
x R
6
25
DS(on)max
Tj = 150°C
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 20V
30
V
A
I
V
D
GS
page 7
40
10
10 Drain-source on-state resistance
R
parameter : I
12 Typ. gate charge
V
parameter: I
GS
DS(on)
Ω
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
= f (Q
V
16
12
10
0
8
6
4
2
0
-60
0
SPP21N50C3
SPP21N50C3
= f (T
SPI21N50C3, SPA21N50C3
Gate
20
-20
D
D
j
)
= 21 A pulsed
= 13.1 A, V
)
40
20
98%
60
0,2
typ
60
V
DS max
GS
80
SPP21N50C3
100
= 10 V
100
0,8 V
2009-12-22
DS max
°C
nC
T
Q
j
Gate
140
180