SPA21N50C3 Infineon Technologies, SPA21N50C3 Datasheet
SPA21N50C3
Specifications of SPA21N50C3
SPA21N50C3IN
SPA21N50C3X
SPA21N50C3XK
SPA21N50C3XTIN
SPA21N50C3XTIN
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Related parts for SPA21N50C3
SPA21N50C3 Summary of contents
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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance Type Package SPP20N65C3 ...
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Maximum Ratings Parameter Drain Source voltage slope = 480 20 125 ° Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ...
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Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to ...
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Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol ...
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Power dissipation tot C SPP20N65C3 240 W 200 180 160 140 120 100 Safe operating area ...
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Transient thermal impedance FullPAK thJC p parameter K Typ. ...
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Drain-source on-state resistance DS(on) j parameter : SPP20N65C3 1.1 Ω 0.9 0.8 0.7 0.6 0.5 0.4 0.3 98% 0.2 typ 0.1 0 -60 - Typ. ...
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Typ. switching time inductive load par.: V =380V, V =0/+13V Typ. drain current slope ...
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Typ. switching losses inductive load par.: V =380V, V =0/+13V 0.08 *) Eon includes SPD06S60 diode commutation losses mWs 0.06 0.05 Eoff 0.04 0.03 0.02 0. ...
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Drain-source breakdown voltage = (BR)DSS j SPP20N65C3 785 V 745 725 705 685 665 645 625 605 585 -60 - Typ. capacitances parameter: V ...
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Definition of diodes switching characteristics Rev. 3.0 SPP20N65C3, SPA20N65C3 Page 11 SPI20N65C3 2007-08-30 ...
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PG-TO220-3-1, PG-TO220-3-21 Rev. 3.0 SPP20N65C3, SPA20N65C3 Page 12 SPI20N65C3 2007-08-30 ...
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PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute ) Rev. 3.0 SPP20N65C3, SPA20N65C3 Page 13 SPI20N65C3 2007-08-30 ...
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PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 3.0 SPP20N65C3, SPA20N65C3 Page 14 SPI20N65C3 2007-08-30 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...