IPB107N20N3 G Infineon Technologies, IPB107N20N3 G Datasheet - Page 2

• Manufacturer Part Number: IPB107N20N3 G
• Description: MOSFET N-CH 200V 88A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB107N20N3 G

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.7 mOhm @ 88A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 87nC @ 10V
• Input Capacitance (ciss) @ Vds: 7100pF @ 100V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Forward Transconductance Gfs (max / Min): 141 S, 71 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 88 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB107N20N3 G; IPB107N20N3 GTR