IPW60R125CP Infineon Technologies, IPW60R125CP Datasheet
IPW60R125CP
Manufacturer Part Number
IPW60R125CP
Description
MOSFET N-CH 650V 25A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPW60R125CP.pdf
(11 pages)
Specifications of IPW60R125CP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
3.5V @ 1.1mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 100V
Power - Max
208W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
208 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
53 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPW60R125CPX
IPW60R125CPXK
SP000088489
IPW60R125CPXK
SP000088489
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPW60R125CP
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPW60R125CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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IPW60R125CP Summary of contents
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... Infineon Technologies failure of such components can reasonably be expected to approval of Infineon Technologies failure of such components can reasonably be expected to ...
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New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...