SPW52N50C3 Infineon Technologies, SPW52N50C3 Datasheet - Page 2

• Manufacturer Part Number: SPW52N50C3
• Description: MOSFET N-CH 560V 52A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW52N50C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 3.9V @ 2.7mA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 52A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014626; SPW52N50C3; SPW52N50C3IN; SPW52N50C3X; SPW52N50C3XK

Please note the new package dimensions arccording to PCN 2009-134-A
Maximum Ratings
Parameter
Drain Source voltage slope
V
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage V
Drain-Source avalanche
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance R
Gate input resistance
Rev. 2.6
DS
= 400 V, I
D
= 52 A, T
j
= 125 °C
V
V
I
I
R
Symbol
DSS
GSS
(BR)DSS V
(BR)DS
GS(th)
DS(on)
G
Page 2
V
I
V
T
T
V
V
T
T
f=1MHz, open Drain
D
j
j
j
j
GS
GS
DS
GS
GS
=25°C,
=150°C
=25°C
=150°C
=2700μΑ, V
Conditions
=500V, V
=0V, I
=0V, I
=20V, V
=10V, I
Symbol
d v /d t
Symbol
R
R
T
D
D
sold
=0.25mA
=20A
thJC
thJA
D
DS
GS
=30A,
GS
=0V
=0V,
=V
DS
min.
min.
500
2.1
-
-
-
-
-
-
-
-
-
-
Values
Values
Value
0.06
0.16
typ.
typ.
600
0.5
0.7
50
3
SPW52N50C3
-
-
-
-
-
-
2008-02-11
max.
max.
0.07
260
250
100
0.3
3.9
62
25
-
-
-
-
Unit
V/ns
Unit
K/W
°C
Unit
V
μA
nA
Ω