NDF0610 Fairchild Semiconductor, NDF0610 Datasheet
NDF0610
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... NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching ...
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ELECTRICAL CHARACTERISTICS (T Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Zero Gate Voltage Drain Current I DSS Gate - Body Leakage, Forward I GSSF Gate - Body Leakage, Reverse I GSSR ON CHARACTERISTICS (Note 1) Gate Threshold Voltage ...
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Typical Electrical Characteristics -1 -10V GS -1.2 -1 -0.8 -0.6 -0.4 -0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 1 -0. -10V GS 1.4 ...
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Typical Electrical Characteristics 1. -10µA D 1.1 1.05 1 0.95 0.9 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...
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... Figure 13. NDS0610 (SOT-23) Maximum Safe 0.01 0 TIME (sec) 1 Figure 14. NDF0610 (TO-92) Transient Thermal Response Curve. 0.01 0 TIME (sec) 1 Figure 15. NDS0610 (SOT-23) Transient Thermal Response Curve -10V G S SINGLE PULSE T = 25° DRAIN-SOURCE VOLTAGE (V) ...