NDC652P Fairchild Semiconductor, NDC652P Datasheet - Page 3

• Manufacturer Part Number: NDC652P
• Description: MOSFET P-CH 30V 2.4A SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of NDC652P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 290pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDC652PTR

ELECTRICAL CHARACTERISTICS
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
I
V
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
S
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 78
b. 125
c. 156
Scale 1 : 1 on letter size paper
JA
R
1a
T
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
J
Parameter
Continuous Source Diode Current
Drain-Source Diode Forward Voltage
J A
T
o
CA
A
C/W when mounted on a 1 in
t
o
o
C/W when mounted on a 0.003 in
C/W when mounted on a 0.01 in
is determined by the user's board design.
R
J C
T
J
R
T
A
CA
t
I
2
D
t
2
pad of 2oz cpper.
R
DS ON
2
2
pad of 2oz cpper.
pad of 2oz cpper.
(T
T
A
J
= 25°C unless otherwise noted)
1b
Conditions
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
1c
Min
Typ
-0.8
Max
JC
-1.3
-1.2
is guaranteed by
NDC652P Rev. D1
Units
A
V