SSH22N50A Fairchild Semiconductor, SSH22N50A Datasheet - Page 2

• Manufacturer Part Number: SSH22N50A
• Description: MOSFET N-CH 500V 22A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of SSH22N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 236nC @ 10V
• Input Capacitance (ciss) @ Vds: 5120pF @ 25V
• Power - Max: 278W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1150235

SSH22N50A
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=8mH, I
(3) I
(4) Pulse Test: Pulse Width = 250 s, Duty Cycle
(5) Essentially Independent of Operating Temperature
BV/ T
BV
V
R
t
t
V
I
I
C
C
C
Q
I
GS(th)
DS(on)
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
I
SM
t
t
t
S
SD
rr
oss
rss
DSS
iss
fs
r
f
gs
gd
rr
SD
g
J
22A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=22A, V
300A/ s, V
DD
Characteristic
Characteristic
=50V, R
DD
G
=27 , Starting T
BV
DSS
(T
, Starting T
C
=25 C unless otherwise specified)
(1)
(4)
J
2%
=25 C
Min.
Min.
J
500
2.0
=25 C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
17.31
3940
Typ.
Typ.
0.69
79.6
8.35
465
215
150
182
528
27
30
43
26
--
--
--
--
--
--
--
--
--
--
5120
Max. Units
Max. Units
-100
0.25
100
100
535
250
310
236
4.0
1.4
10
65
70
95
22
88
--
--
--
--
--
--
--
V/ C
nA
nC
pF
ns
ns
V
V
A
V
A
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
=250 A
=22A
F
=25 C,I
=25 C,I
=5.3
/dt=100A/ s
=0V,I
=5V,I
=30V
=-30V
=500V
=400V,T
=10V,I
=50V,I
=0V,V
=250V,I
=400V,V
See Fig 13
Test Condition
Test Condition
See Fig 5
D
D
S
F
DS
=250 A
=250 A
D
D
=22A
=22A,V
=11A
=11A
D
=25V,f =1MHz
C
GS
=22A,
=125 C
See Fig 7
=10V,
GS
=0V
(4) (5)
(4) (5)
(4)
(4)
(4)