HUFA75344G3 Fairchild Semiconductor, HUFA75344G3 Datasheet - Page 3

• Manufacturer Part Number: HUFA75344G3
• Description: MOSFET N-CH 55V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA75344G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 20V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 285W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Source to Drain Diode Specifications
Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.01
0.1
2
1
10
TEMPERATURE
-5
25
PARAMETER
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
C
50
, CASE TEMPERATURE (
SINGLE PULSE
75
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
-4
100
125
o
SYMBOL
C)
Q
V
t
SD
RR
rr
10
150
-3
t, RECTANGULAR PULSE DURATION (s)
I
I
I
SD
SD
SD
175
= 75A
= 75A, dI
= 75A, dI
TEST CONDITIONS
SD
SD
10
/dt = 100A/ s
/dt = 100A/ s
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
80
60
40
20
0
25
HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B3
CASE TEMPERATURE
50
10
-1
T
C
, CASE TEMPERATURE (
75
NOTES:
DUTY FACTOR: D = t
PEAK T
MIN
-
-
-
J
100
= P
DM
TYP
10
-
-
-
0
x Z
P
DM
125
JC
1
/t
o
x R
2
MAX
C)
1.25
105
210
t
1
t
JC
2
150
+ T
C
UNITS
10
nC
ns
V
1
175