RFP70N03 Fairchild Semiconductor, RFP70N03 Datasheet - Page 3

• Manufacturer Part Number: RFP70N03
• Description: MOSFET N-CH 30V 70A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of RFP70N03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 20V
• Input Capacitance (ciss) @ Vds: 3300pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
300
100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
10
0
1
0
1
10
10
10
T
T
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
-1
-2
10
C
J
0
= MAX RATED
= 25
-5
0.5
0.2
0.1
0.05
0.02
0.01
25
TEMPERATURE
o
C
V
DS
SINGLE PULSE
T
DS(ON)
50
C
, DRAIN TO SOURCE VOLTAGE (V)
, CASE TEMPERATURE (
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
100
V
10
DSS(MAX)
125
o
C)
= 30V
10
-3
150
t
1ms
10ms
100ms
DC
100µs
1
, RECTANGULAR PULSE DURATION (s)
175
50
10
-2
NOTE: Refer to Application Notes AN9321 and AN9322.
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
100
300
I
DM
80
70
60
50
40
30
20
10
10
0
0.01
25
t
If R = 0
t
If R ≠ 0
AV
AV
= (L/R) ln [(I
= (L) (I
CASE TEMPERATURE
50
10
AS
-1
)/(1.3 x RATED BV
AS
t
T
AV
C
x R)/(1.3 x RATED BV
0.10
, CASE TEMPERATURE (
, TIME IN AVALANCHE (ms)
NOTES:
DUTY FACTOR: D = t
PEAK T
75
RFP70N03, RF1S70N03, RF1S70N03SM Rev. C
J
= P
100
DSS
DM
10
x Z
- V
STARTING T
STARTING T
P
-0
DM
DD
DSS
θJC
125
1
)
/t
1
2
x R
- V
o
t
C)
DD
1
θJC
t
2
) +1]
J
J
+ T
150
= 25
= 150
C
o
10
C
o
C
1
175
10