RFG70N06 Fairchild Semiconductor, RFG70N06 Datasheet - Page 3

• Manufacturer Part Number: RFG70N06
• Description: MOSFET N-CH 60V 70A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of RFG70N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 156nC @ 20V
• Input Capacitance (ciss) @ Vds: 2250pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
500
100
1.2
1.0
0.8
0.6
0.4
0.2
10
0
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
1
0
1
T
T
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
C
J
0.01
0.1
= MAX RATED
= 25
1
10
25
TEMPERATURE
-5
o
0.5
0.2
0.1
0.05
0.02
0.01
C
V
DS
T
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
50
C
, CASE TEMPERATURE (
SINGLE PULSE
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
10
100
125
o
C)
T
C
= 25
10
150
-3
100µs
o
t, RECTANGULAR PULSE DURATION (s)
C, Unless Otherwise Specified
10ms
1ms
175
100
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
1000
80
70
60
50
40
30
20
10
100
0
50
25
10
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FIGURE 5. PEAK CURRENT CAPABILITY
CASE TEMPERATURE
50
10
V
10
GS
-4
-1
T
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev. C
= 10V
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
10
t, PULSE WIDTH (s)
-3
J
= P
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
DM
100
10
= 25
P
-2
x Z
DM
I
10
o
θ
C
=
JC
0
1
o
/t
I 25
C DERATE PEAK
125
2
x R
10
t



o
1
-1
C)
θ
175 T
---------------------- -
JC
t
2
150
+ T
–
150
10
C
C



0
10
1
175
10
1