RFP30P06 Fairchild Semiconductor, RFP30P06 Datasheet

MOSFET P-CH 60V 30A TO-220AB

RFP30P06

Manufacturer Part Number
RFP30P06
Description
MOSFET P-CH 60V 30A TO-220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RFP30P06

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 20V
Input Capacitance (ciss) @ Vds
3200pF @ 25V
Power - Max
135W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFP30P06
Manufacturer:
HARRIS
Quantity:
4 000
©2002 Fairchild Semiconductor Corporation
30A, 60V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA09834.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.
Packaging
RFG30P06
RFP30P06
RF1S30P06SM
PART NUMBER
SIDE METAL)
(BOTTOM
DRAIN
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-263AB
PACKAGE
Data Sheet
RFP30P06
F1S30P06
RFG30P06
SOURCE
DRAIN
BRAND
SOURCE
GATE
GATE
JEDEC TO-263AB
RFG30P06, RFP30P06, RF1S30P06SM
Features
• 30A, 60V
• r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
(FLANGE)
Components to PC Boards”
DRAIN
o
C Operating Temperature
January 2002
(FLANGE)
= 0.065 Ω
DRAIN
JEDEC TO-220AB
G
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
D
S
®
SOURCE
Model
DRAIN
GATE

Related parts for RFP30P06

RFP30P06 Summary of contents

Page 1

... TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND RFG30P06 RFP30P06 F1S30P06 SOURCE DRAIN GATE JEDEC TO-263AB GATE DRAIN (FLANGE) SOURCE January 2002 = 0.065 Ω ® Model JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) RFG30P06, RFP30P06, RF1S30P06SM Rev. B ...

Page 2

... STG 300 L 260 pkg MIN TYP - 150 C - DSS 2.00 Ω -10V - -48V 30A, - 140 1.6 Ω 1.6mA G(REF) - 5.5 - 3200 - 800 - 175 - - MIN TYP - - - - RFG30P06, RFP30P06, RF1S30P06SM Rev. B UNITS MAX UNITS - - µ µ -25 ± 100 - nA Ω - 0.065 - 100 ns 170 6.6 ...

Page 3

... PEAK θ FOR TEMPERATURES ABOVE -20V GS DERATE PEAK CURRENT V = -10V GS CAPABILITY AS FOLLOWS:  175  = ---------------------  TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION - PULSE WIDTH (s) FIGURE 5. PEAK CURRENT CAPABILITY RFG30P06, RFP30P06, RF1S30P06SM Rev. B 150 175 θ  –  150  ...

Page 4

... PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V = -10V 30A GS D 1.5 1 0.5 0 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE 250µA D 1.5 1 0.5 0 -80 - JUNCTION TEMPERATURE ( J, VOLTAGE vs JUNCTION TEMPERATURE RFG30P06, RFP30P06, RF1S30P06SM Rev -20V -10 120 160 200 o C) 120 160 200 o C) ...

Page 5

... DSS DRAIN SOURCE VOLTAGE 0 I G(REF TIME (µs) I G(ACT) CONSTANT GATE CURRENT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS d(ON 10% DS 90% GS 10% 50% PULSE WIDTH FIGURE 17. RESISTIVE SWITCHING WAVEFORMS RFG30P06, RFP30P06, RF1S30P06SM Rev. B -10 DSS -7 G(REF) I G(ACT OFF t d(OFF 10% 90% 50% 90% ...

Page 6

... Test Circuits and Waveforms g(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation (Continued DUT g(REF) Q g(TH -10V - g(-10) Q g(TOT) FIGURE 19. GATE CHARGE WAVEFORMS RFG30P06, RFP30P06, RF1S30P06SM Rev -20V GS ...

Page 7

... Fairchild Semiconductor Corporation - 10 RSCL2 DPLCAP - EVTO GATE LGATE RGATE RIN S1A S2A S1B S2B EGS 8 - ESG + RSCL1 EBREAK 5 17 ESCL RDRAIN 16 VTO + MOS2 21 MOS1 DBREAK CIN LSOURCE RSOURCE 8 7 RBREAK EDS 8 - RFG30P06, RFP30P06, RF1S30P06SM Rev. B DRAIN 2 LDRAIN DBODY 3 SOURCE 18 RVTO 19 VBAT + ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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