FDFS2P102 Fairchild Semiconductor, FDFS2P102 Datasheet - Page 3

• Manufacturer Part Number: FDFS2P102
• Description: MOSFET P-CH 20V 3.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDFS2P102

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 125 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P102TR; FDFS2P102_NL; FDFS2P102_NLTR; FDFS2P102_NLTR

Device #1 FAN5009M
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HAST2
HTSL
TMCL1
Device #2 FAN5109M
Package:
#Leads:
Precondition Description:
P/C
X
X
X
-1
-1
-1
P/C
Standard
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
0V
Conditions
Readpoints
TP1
264
168
100
TP2
500
500
TP3
1000
Read-
points
Samples
A
45
77
77
Sample
A
0
Pg. 3