FDFS6N303 Fairchild Semiconductor, FDFS6N303 Datasheet
FDFS6N303
Manufacturer Part Number
FDFS6N303
Description
MOSFET N-CH 30V 6A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDFS6N303.pdf
(5 pages)
Specifications of FDFS6N303
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
35 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFS6N303TR
FDFS6N303_NL
FDFS6N303_NLTR
FDFS6N303_NLTR
FDFS6N303_NL
FDFS6N303_NLTR
FDFS6N303_NLTR
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Manufacturer
Quantity
Price
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Part Number:
FDFS6N303
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDFS6N303
Manufacturer:
FSC
Quantity:
2 395
Part Number:
FDFS6N303
Manufacturer:
FAIRCHILD/仙童
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20 000
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Part Number:
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Manufacturer:
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Quantity:
50 000
© 2003 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
Schottky Diode Maximum Ratings
V
I
D
O
FDFS6N303
N-Channel MOSFET with Schottky Diode
MOSFET Maximum Ratings
J
General Description
DSS
GSS
D
RRM
The FDFS6N303 incorporates a high cell density MOSFET
and low forward drop (0.35V) Schottky diode into a single
surface mount power package. The MOSFET and Schottky
diode are isolated inside the package. The general pur-
pose pinout has been chosen to maximize flexibility and
ease of use. This product is particularly suited for switch-
ing applications such as DC/DC buck, boost, synchronous,
and non-synchronous converters where the MOSFET is driven
as low as 4.5V and fast switching, high efficiency and
small PCB footprint
,T
STG
SOT-23
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Repetitive Peak Reverse Voltage
Average Forward Current
SO-8
C
C
D
- Pulsed
SuperSOT
D
pin 1
is desirable.
A
TM
-6
A
T
S
A
= 25
G
T
o
SuperSOT
C unless otherwise noted
A
= 25
(Note 1c)
(Note 1a)
(Note 1a)
(Note 1a)
o
C unless otherwise noted
TM
-8
Features
SO-8
6 A, 30 V. R
V
V
V
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
General purpose pinout for design flexibility.
Ideal for DC/DC converter applications.
F
F
F
G
A
A
S
< 0.28 V @ 0.1 A
< 0.42 V @ 3 A
< 0.50 V @ 6 A.
1
2
4
3
R
DS(ON)
DS(ON)
FDFS6N303
-55 to 150
±20
1.6
0.9
30
30
30
= 0.035
6
2
= 0.055
2
SOT-223
@ V
@ V
8
7
6
5
GS
GS
= 10 V.
= 4.5 V.
October 2003
C
D
C
D
SOIC-16
FDFS6N303 Rev. D3
Units
°C
W
V
V
A
V
A
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FDFS6N303 Summary of contents
Page 1
... FDFS6N303 N-Channel MOSFET with Schottky Diode General Description The FDFS6N303 incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general pur- pose pinout has been chosen to maximize flexibility and ease of use ...
Page 2
... C 0.02 in pad of 2oz copper. Min Typ Max =125° 100 -100 1 1.7 3 0.025 0.035 0.043 0.055 12 15 350 220 7 1.3 0.8 1.2 (Note 2) 30 0.5 280 420 500 135 C 0.003 in 2 pad of 2oz copper. FDFS6N303 Rev. D3 Units V µA µ °C/W °C ...
Page 3
... DRAIN CURRENT (A) D Drain Current and Gate Voltage 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C A 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDFS6N303 Rev 1.2 1.4 ...
Page 4
... Figure 8. Capacitance Characteristics. 1 0.1 0.01 0.001 0.0001 0.00001 0.5 0.6 0 Figure 10. Schottky Diode Reverse Current. 0.01 0 TIME (sec iss C oss C rss = 0V 0 DRAIN TO SOURCE VOLTAGE ( 125°C J 25° REVERSE VOLTAGE ( ( =135° C/W JA P(pk ( Duty Cycle 100 300 FDFS6N303 Rev ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...