FDS4435 Fairchild Semiconductor, FDS4435 Datasheet - Page 3

• Manufacturer Part Number: FDS4435
• Description: MOSFET P-CH 30V 8.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4435

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 5V
• Input Capacitance (ciss) @ Vds: 1604pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rohs Compliant: YES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4435TR

Typical Characteristics
40
30
20
10
50
40
30
20
10
0
0
1.5
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation with
0
1
Figure 1. On-Region Characteristics.
V
-50
Figure 5. Transfer Characteristics.
DS
V
GS
V
= -5V
I
D
GS
= -10V
= -8.8A
= -10V
-25
2
-V
-V
DS
GS
0
-6.0V
T
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
1
25
-4.5V
V
2.5
50
-4.0V
75
3
T
A
2
100
= -55
-3.5V
o
o
C
C)
125
-3.0V
3.5
125
o
150
C
25
o
C
175
3
4
Figure 6. Body Diode Forward Voltage Variation
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.0001
0.001
0.01
with Source Current and Temperature.
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
100
0.1
10
2
2
1
1
0
0
Drain Current and Gate Voltage.
T
V
A
GS
= 25
=0V
V
Gate-to-Source Voltage.
GS
o
C
0.2
-V
=-4.5V
-V
10
SD
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
T
A
-4.5V
T
= 125
-I
A
0.4
D
= 125
, DRAIN CURRENT (A)
-5.0V
o
20
C
o
C
6
0.6
25
-6.0V
o
C
30
-7.0V
0.8
-55
o
8
C
-8.0V
40
FDS4435 Rev F1(W)
I
1
D
= -4.4A
-10V
1.2
10
50