NDS8434A Fairchild Semiconductor, NDS8434A Datasheet - Page 3

• Manufacturer Part Number: NDS8434A
• Description: MOSFET P-CH 20V 7.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8434A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1730pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS8434ATR

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
Notes:
S
1. R
Typical R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
SD
P
design while R
D
JA
t
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
R
a. 50
b. 105
c. 125
Scale 1 : 1 on letter size paper
T
J
1a
JA
T
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
A
t
o
CA
C/W when mounted on a 1 in
o
o
C/W when mounted on a 0.006 in
C/W when mounted on a 0.04 in
is determined by the user's board design.
R
JC
T
J
R
T
A
C A
t
I
2
D
t
2
pad of 2oz copper.
R
(T
DS ON
2
2
pad of 2oz copper.
A
pad of 2oz copper.
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
1c
Min
NDS8434A Rev.D
-0.64
Typ
JC
Max
-2.1
-1.2
is guaranteed by
Units
A
V