FDS3612 Fairchild Semiconductor, FDS3612 Datasheet
FDS3612
Specifications of FDS3612
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FDS3612 Summary of contents
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... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ March 2001 = 120 DS(ON 130 DS(ON Ratings Units 100 3 2.5 W 1.2 1.0 –55 to +175 C C/W 50 C/W 25 Tape width Quantity 12mm 2500 units FDS3612 Rev B1(W) ...
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... Min Typ Max Units 90 mJ 3.4 A 100 V 106 mV 100 nA –100 –6 mV 120 m 94 130 170 245 632 8 4 2.4 nC 3.8 nC 2.1 A 0.75 1 125°C/W when mounted on a minimum pad. FDS3612 Rev B1(W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4.0V GS 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 1 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS3612 Rev B1( 1.4 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS 100 V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125°C Duty Cycle 100 FDS3612 Rev B1(W) 1000 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...