This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... A Test Conditions 3.2 A (Note 100 A/µ determined by the user's board design 40°C/W when mounted 1in pad copper and V = 10V. Package current limitation is 21A DS(on) J(max) GS Min Typ Max Units 0.7 1 96°C/W when mounted minimum pad. FDD6688/FDU6688 Rev F(W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD6688/FDU6688 Rev F(W) 100 10 1.4 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation r( °C/W JA P(pk ( Duty Cycle 100 1000 FDD6688/FDU6688 Rev F(W) 30 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...