FDP5645 Fairchild Semiconductor, FDP5645 Datasheet

MOSFET N-CH 60V 80A TO-220

FDP5645

Manufacturer Part Number
FDP5645
Description
MOSFET N-CH 60V 80A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP5645

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
107nC @ 10V
Input Capacitance (ciss) @ Vds
4468pF @ 30V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP5645
Manufacturer:
FAIRCHILD
Quantity:
12 500
FDP5645/FDB5645
60V N-Channel PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
DS(ON)
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
2000 Fairchild Semiconductor Corporation
D
D
J
L
DSS
GSS
, T
G
J C
JA
Device Marking
STG
D
specifications.
N-Channel
FDB5645
FDP5645
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Total Power Dissipation @ T
Operating and Storage Junction Temperature Range
Maximum lead termperature for soldering purposes,
1/8“ from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
MOSFET
has
TO-220
FDP Series
FDB5645
FDP5645
Device
Parameter
been
Derate above 25 C
C
designed
– Continuous (note 3)
– Pulsed
G
= 25 C
T
A
=25
S
o
®
C unless otherwise noted
Reel Size
MOSFET
note 2
13”
Features
TO-263AB
FDB Series
D
80 A, 60 V.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor.
High performance trench technology for extremely
low R
175 C maximum junction temperature rating.
DS(ON)
FDP5645
.
Tape width
R
R
DS(ON)
DS(ON)
-65 to +175
24mm
+275
0.83
62.5
300
125
1.2
60
80
= 0.0095
= 0.011
20
G
FDB5645
@ V
@ V
FDP5645/FDB5645 Rev B (W)
March 2000
D
S
GS
GS
= 6 V.
Quantity
800 units
= 10 V
Units
W/ C
C/W
C/W
W
V
V
A
C
C

Related parts for FDP5645

FDP5645 Summary of contents

Page 1

... C unless otherwise noted A FDP5645 – Continuous (note 3) – Pulsed = Derate above 25 C Reel Size 13” note 2 March 2000 R = 0.0095 @ DS(ON 0.011 @ DS(ON FDB5645 Units 300 125 W 0. -65 to +175 C +275 C 1.2 C/W 62.5 C/W Tape width Quantity 24mm 800 units FDP5645/FDB5645 Rev B (W) ...

Page 2

... Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A T = 25°C unless otherwise noted A Test Conditions (Note 250 250 A, Referenced 250 250 A, Referenced =10V =125 1.0 MHz GEN Min Typ Max Units 800 mV 100 nA –100 -7 4468 pF 810 pF 198 107 300 A 0.9 1.3 V FDP5645/FDB5645 Rev. B (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4.5V GS 5.0V 6.0V 7.0V 10V 8. 100 I , DRAIN CURRENT ( 42A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDP5645/FDB5645 Rev. B (W) 10 1.4 ...

Page 4

... DC 1000 0 10 100 0.01 Figure 10. Single Pulse Maximum 0 ,TIME (ms 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 1 100 1000 SINGLE PULSE TIME (ms) Power Dissipation. R ( 1.2 °C P(pk ( Duty Cycle 100 500 1000 FDP5645/FDB5645 Rev. B (W) 60 ...

Page 5

... These larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped. FSCINT Labe l samp le FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B CBVK741B019 1080 LOT: ...

Page 6

TO-220 Tape and Reel Data and Package Dimensions, continued TO-220 (FS PKG Code 37) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 September 1998, Rev. A ...

Page 7

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions 2 TO-263AB/D PAK Packaging Configuration: Figure 1.0 Customized Label 2 TO-263AB/D PAK Packaging Information Standard L86Z Packaging Option (no flow code) Packaging type TNR Rail/Tube Qty per Reel/Tube/Bag 800 45 ...

Page 8

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions, continued 2 TO-263AB/D PAK Embossed Carrier Tape Configuration: Figure 3 Pkg type O263AB/ 10.60 15.80 24.0 1. PAK +/-0.10 ...

Page 9

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions, continued TO-263AB/D 2 PAK (FS PKG Code 45) Scale 1:1 on letter size paper Dimensions shown below are in: Part Weight per unit (gram): 1.4378 1:1 inches [millimeters] August 1998, ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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