FDB4020P Fairchild Semiconductor, FDB4020P Datasheet

FDB4020P

Manufacturer Part Number

FDB4020P

Description

MOSFET P-CH 20V 16A TO-263AB

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDP4020P.pdf (5 pages)

Specifications of FDB4020P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

80 mOhm @ 8A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

16A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

13nC @ 4.5V

Input Capacitance (ciss) @ Vds

665pF @ 10V

Power - Max

37.5W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDB4020P

Manufacturer:

FAIRCHILD

Quantity:

30 000

Current page: 1 of 5
Download datasheet (79Kb)

2000 Fairchild Semiconductor International

FDP4020P/FDB4020P

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description

This P-Channel low threshold MOSFET has been

designed for use as a linear pass element for low voltage

outputs. In addition, the part may be used as a low voltage

load switch when switching outputs on or off for power

management.The part may also be used in conjunction

with DC-DC converters requiring P-Channel.

A bsolute M axim um Ratings

Therm al C haracteristics

Package O utlines and O rdering Inform ation

Sym bol

DSS

G SS

, T

D evice M arking

STG

FDP 4020P

Drain-S ource V oltage

G ate-S ource V oltage

Drain Current

Total P ower Dissipation @ T

O perating and S torage Junction Tem perature Range

Therm al Resistance, Junction-to- Case

Therm al Resistance, Junction-to- A m bient

- Continuous

- P ulsed

Derate above 25 C

Param eter

FDP 4020P

D evice

= 25 C

= 25°C unless otherw ise noted

R eel Size

Features

• -16 A, -20 V. R

• Critical DC electrical parameters specified at elevated

• High density cell design for extremely low R

• TO-220 and TO-263 (D 2 PAK) package for both

• 175 C maximum junction temperature rating.

13’’

through hole and surface mount applications.

temperature.

(N ote 1)

FD P4020P

DS(on)

62.5

Tape W idth

= 0.08

12m m

= 0.11

-65 to +175

37.5

0.25

-20

-16

-48

FD B 4020P

@ V

= -4.5 V

= -2.5 V.

September 2000

2500 units

Q uantity

DS(on)

U nits

FDP4020P Rev. B

W / C

C/W

Related parts for FDB4020P

FDB4020P Summary of contents

Page 1

... FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown DSS Voltage Breakdown Voltage BV DSS Temperature Coefficient Zero Gate Voltage Drain Current V DSS I Gate-Body Leakage Current, GSSF Forward I Gate-Body Leakage Current, GSSR Reverse On ...

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FDB4020P Fairchild Semiconductor, FDB4020P Datasheet

FDB4020P

Specifications of FDB4020P

Available stocks

Related parts for FDB4020P

FDB4020P Summary of contents

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Page 2

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