FDS7098N3 Fairchild Semiconductor, FDS7098N3 Datasheet
FDS7098N3
Manufacturer Part Number
FDS7098N3
Description
MOSFET N-CH 30V 14A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS7098N3.pdf
(6 pages)
Specifications of FDS7098N3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 5V
Input Capacitance (ciss) @ Vds
1587pF @ 15V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS7098N3
Manufacturer:
TEDNICE
Quantity:
17
Company:
Part Number:
FDS7098N3-NL
Manufacturer:
FAIRCHILD
Quantity:
12 570
FDS7098N3
30V N-Channel PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
•
•
•
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJC
, T
DC/DC converter
Power management
Load switch
Device Marking
STG
N-Channel
FDS7098N3
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
MOSFET
DS(ON)
and fast switching speed.
– Continuous
– Pulsed
FDS7098N3
has
Device
Parameter
been
designed
MOSFET
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
• 14 A, 30 V
• High performance trench technology for extremely
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal
low R
performance in industry-standard package size
DS(ON)
5
6
8
7
Tape width
R
R
DS(ON)
DS(ON)
–55 to +150
12mm
Drain Contact
Bottom-side
Ratings
±20
3.0
1.5
0.5
30
14
60
40
= 9 mΩ @ V
= 12 mΩ @ V
GS
GS
May 2004
1
FDS7098N3 Rev C (W)
4
3
2
2500 units
= 10 V
= 4.5 V
Quantity
Units
°C/W
°C
W
V
V
A
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Datasheet:
FDS7098N3 Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 13’’ May 2004 mΩ DS(ON mΩ 4.5 V DS(ON) GS Bottom-side Drain Contact Ratings Units 30 V ± 3.0 W 1.5 °C –55 to +150 °C/W 40 0.5 Tape width Quantity 12mm 2500 units FDS7098N3 Rev C (W) ...
Page 2
... Min Typ Max Units mV/°C µA 10 ±100 –6 mV/°C 7.5 9 mΩ 9 1587 pF 385 pF 154 pF Ω (Note (Note 2) 0.7 1 85°C/W when mounted on a minimum pad copper Scale letter size paper FDS7098N3 Rev C (W) ...
Page 3
... C 0.0001 0 3.5 4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS7098N3 Rev C ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 85°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ °C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDS7098N3 Rev C (W) 30 ...
Page 5
... Dimensional Outline and Pad Layout FDS7098N3 Rev C (W) ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...