FQD5N20LTM Fairchild Semiconductor, FQD5N20LTM Datasheet

MOSFET N-CH 200V 3.8A DPAK

FQD5N20LTM

Manufacturer Part Number
FQD5N20LTM
Description
MOSFET N-CH 200V 3.8A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQD5N20LTM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.2 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
6.2nC @ 5V
Input Capacitance (ciss) @ Vds
325pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor International
FQD5N20L / FQU5N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters,
switch mode power supplies, and motor control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
resistance,
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
provide
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
superior
= 25°C) *
Parameter
= 25°C)
Parameter
G
T
D
C
C
C
switching
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 3.8A, 200V, R
• RoHS Compliant
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
FQU Series
operation from logic drivers
I-PAK
FQD5N20L / FQU5N20L
DS(on)
Typ
--
--
--
-55 to +150
= 1.2
15.2
0.29
300
200
3.8
2.4
3.8
3.7
5.5
2.5
60
37
20
G
@V
!
!
Max
GS
110
3.4
50
October 2008
= 10 V
! "
! "
QFET
!
!
!
!
S
D
"
"
"
"
"
"
Rev. A3, October 2008
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQD5N20LTM

FQD5N20LTM Summary of contents

Page 1

... JC R Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor International Features • 3.8A, 200V, R • Low gate charge ( typical 4.8 nC) • Low Crss ( typical 6.0 pF) • Fast switching superior switching • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 6.2mH 3.8A 50V 4.5A, di/dt 300A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 200 160 125° ...

Page 3

... 10V Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 500 400 300 200 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ ※ Note : T = 25℃ 0 Figure 4. Body Diode Forward Voltage ...

Page 4

... Limited by R DS(on ※ Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 4 3 100 ...

Page 5

... 3mA 3mA Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor International D - PAK Dimensions in Millimeters Rev. A3, October 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor International I - PAK Dimensions in Millimeters Rev. A3, October 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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