FQD5N20LTM Fairchild Semiconductor, FQD5N20LTM Datasheet - Page 3

• Manufacturer Part Number: FQD5N20LTM
• Description: MOSFET N-CH 200V 3.8A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD5N20LTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 325pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor International
Typical Characteristics
500
400
300
200
100
10
10
10
0
-1
8
6
4
2
0
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
10 V
3.0 V
V
GS
2
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
D
, Drain Current [A]
0
10
4
0
V
V
GS
GS
= 10V
= 5V
C
C
C
iss
oss
rss
6
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
※ Note : T
gs
gd
ds
1
C
+ C
+ C
= 25℃
10
8
gd
※ Notes :
gd
1
1. V
2. f = 1 MHz
(C
ds
J
GS
= 25℃
= shorted)
= 0 V
10
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
1
0
-1
1
0
0.2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25℃
Figure 2. Transfer Characteristics
150℃
0.4
Variation vs. Source Current
150℃
2
2
0.6
V
V
V
DS
GS
Q
SD
and Temperature
V
25℃
= 160V
G
DS
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
-55℃
V
= 100V
0.8
DS
4
= 40V
4
1.0
6
6
1.2
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
DS
GS
= 30V
= 0V
8
8
D
1.6
= 4.5 A
Rev. A3, October 2008
1.8
10
10