FQI4N20TU Fairchild Semiconductor, FQI4N20TU Datasheet
FQI4N20TU
Manufacturer Part Number
FQI4N20TU
Description
MOSFET N-CH 200V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQB4N20TM.pdf
(9 pages)
Specifications of FQI4N20TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
6.5nC @ 10V
Input Capacitance (ciss) @ Vds
220pf @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
25 ns
Minimum Operating Temperature
- 55 C
Rise Time
50 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQI4N20TU
Manufacturer:
FSC
Quantity:
3 000
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QFET
QFET
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FQI4N20TU Summary of contents
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TYP 10.00 0.20 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 ...
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TYP 10.00 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 ...
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