FQI2P25TU Fairchild Semiconductor, FQI2P25TU Datasheet

MOSFET P-CH 250V 2.3A I2PAK

FQI2P25TU

Manufacturer Part Number
FQI2P25TU
Description
MOSFET P-CH 250V 2.3A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQI2P25TU

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 Ohm @ 1.15A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
4 Ohms
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.3 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
25 ns
Minimum Operating Temperature
- 55 C
Rise Time
40 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQI2P25TU
Manufacturer:
FSC
Quantity:
1 000
©2000 Fairchild Semiconductor International
FQB2P25 / FQI2P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Absolute Maximum Ratings 
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
 T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -2.3A, -250V, R
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI Series
I
2
-PAK
FQB2P25 / FQI2P25
Typ
--
--
--
DS(on)
-55 to +150
= 4.0
-1.45
-250
3.13
0.42
-2.3
-9.2
-2.3
-5.5
120
300
5.2
52
30
G
@V
! ! ! !
! ! ! !
Max
62.5
2.4
40
GS
QFET
QFET
QFET
QFET
= -10 V
! ! ! !
! ! ! !
S
! ! ! !
! ! ! !
D
 

 

 

 



 
 






   
   
April 2000
Units
W/°C
Units
°CW
°CW
°CW
V/ns
mJ
mJ
Rev. A, April 2000
°C
°C
W
W
V
A
A
A
V
A
TM

Related parts for FQI2P25TU

FQI2P25TU Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Features • -2.3A, -250V, R • Low gate charge ( typical 6.5 nC) • Low Crss ( typical 6.5 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 36mH -2.3A -50V -2.3A, di/dt  300A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -250 ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 400 300 C iss C oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International Notes : 1. 250  s Pulse Test = 10V Note : 4.5 6.0 0.2 Figure 4. Body Diode Forward Voltage ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 2.5 2.0 1.5 1.0  Notes : 0 -250  0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 2.5 2.0 100 1.5 DC 1.0 0.5 0 Figure 10. Maximum Drain Current ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 9.90 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 D PAK 0.20 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Rev. A, April 2000 ...

Page 8

... Package Dimensions (Continued) 9.90 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 I PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Rev. A, April 2000 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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