FQI3P20TU Fairchild Semiconductor, FQI3P20TU Datasheet - Page 7

• Manufacturer Part Number: FQI3P20TU
• Description: MOSFET P-CH 200V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3P20TU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.7 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 25 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Package Dimensions
1.27
2.54 TYP
0.10
10.00
9.90
0.20
0.20
2.54 TYP
0.80
0.10
D
2
PAK
10.00
(2XR0.45)
4.50
(8.00)
(4.40)
0.20
0.20
2.40
0.10
1.30
0.80
0.50
+0.10
–0.05
0.20
0.15
+0.10
–0.05
0.10
Rev. A, April 2000