FQP9N25C Fairchild Semiconductor, FQP9N25C Datasheet
FQP9N25C
Specifications of FQP9N25C
Available stocks
Related parts for FQP9N25C
FQP9N25C Summary of contents
Page 1
... G ● ● ● ● S FQP9N25C FQPF9N25C Units 250 V 8.8 8 5.6 5 35.2 35 ± 285 mJ 8.8 A 7.4 mJ 5.5 V/ 0.59 0.3 W/°C -55 to +150 °C 300 °C FQP9N25C FQPF9N25C Units 1.69 3.29 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, March 2004 ® ...
Page 2
... G ≤ 8.8A, di/dt ≤ 300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...
Page 3
... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 1500 C iss 1000 C oss C rss 500 Notes : ※ MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation 1 10 150 ※ Notes : 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS ※ ...
Page 4
... Limited by R DS(on Notes : ※ 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for FQP9N25C Case Temperature [ ] C Figure 10. Maximum Drain Current vs Case Temperature ©2004 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : ※ 0 250 µ ...
Page 5
... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP9N25C Figure 11-2. Transient Thermal Response Curve for FQPF9N25C ©2004 Fairchild Semiconductor Corporation (Continued) ※ θ ※ ℃ θ ℃ θ θ Rev. A, March 2004 ...
Page 6
... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...
Page 7
... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...
Page 8
... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2004 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, March 2004 ...
Page 9
... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2004 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, March 2004 ...
Page 10
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...