HUF76407P3 Fairchild Semiconductor, HUF76407P3 Datasheet
HUF76407P3
Specifications of HUF76407P3
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HUF76407P3 Summary of contents
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... Ordering Information PART NUMBER HUF76407P3 NOTE: When ordering, use the entire part number Unless Otherwise Specified HUF76407P3 = 0.092 10V 0.107 Curves GS PACKAGE BRAND TO-220AB 76407P HUF76407P3 60 DSS 60 DGR Figure 4 DM Figures -55 to 175 J STG 300 L 260 pkg HUF76407P3 Rev. B UNITS ...
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... 8A, dI /dt = 100A MIN TYP (Figure 12 0.077 - 0.095 - 0.107 - - - - - - - 8 - 105 - 30V, - 9.4 - 5.2 = 1.0mA - .36 - 1.2 - 2.5 - 350 - 105 - 23 MIN TYP - - - - - - - - MAX UNITS - 250 A 100 0.092 0.107 0.117 o 3.94 C C/W 170 132 ns 11.3 nC 6 MAX UNITS 1. 159 nC HUF76407P3 Rev. B ...
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... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY 10V 4. 100 125 T , CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS 150 175 175 - T C 150 1 10 HUF76407P3 Rev. B ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 2.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 V 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE ) - 10V 13A GS D 120 160 200 o C) HUF76407P3 Rev. B ...
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... I = 250 A D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE V = 30V DD WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT V = 10V 30V 12A d(OFF GATE TO SOURCE RESISTANCE ( ) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE 120 160 200 12A = d(ON HUF76407P3 Rev. B ...
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... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM 10V GS t OFF d(OFF 90% 10% 90% 50% HUF76407P3 Rev. B ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES DRAIN 2 SOURCE 3 HUF76407P3 Rev. B ...
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... ESG 8 EVTHRES + + LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT HUF76407P3 Rev. B ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF76407P3 Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...