FQP6P25 Fairchild Semiconductor, FQP6P25 Datasheet - Page 3

• Manufacturer Part Number: FQP6P25
• Description: MOSFET P-CH 250V 6A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP6P25

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 780pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
1400
1200
1000
10
800
600
400
200
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
0
1
0
10
10
0
-1
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-10 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
-15 V
-5.5 V
V
GS
4
-V
-V
DS
DS
-I
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
D
, Drain Current [A]
0
0
8
C
C
C
oss
iss
rss
V
GS
= - 20V
12
V
GS
= - 10V
C
C
C
iss
oss
rss

Notes :
= C
= C
= C
1. 250  s Pulse Test
2. T
10

Note : T
10
gs
gd
ds
1
C
1
+ C
+ C
= 25 
16
gd
gd

Notes :
(C
1. V
2. f = 1 MHz
J
ds
= 25 
= shorted)
GS
= 0 V
20
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
-1
1
0
1
0
0.0
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.5
Variation vs. Source Current
4
25

150

4
150

-V
-V
Q
and Temperature
GS
SD
1.0
G
8
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
25

V
DS
V
DS
V
= -200V
DS
= -125V
1.5
= -50V
12
6
-55

2.0
16

Notes :

Notes :
1. V
2. 250  s Pulse Test
1. V
2. 250  s Pulse Test

Note : I
8
GS
DS
= 0V
= -40V
2.5
20
D
= -6.0 A
Rev. A, April 2000
3.0
10
24