FQPF6P25 Fairchild Semiconductor, FQPF6P25 Datasheet - Page 4

• Manufacturer Part Number: FQPF6P25
• Description: MOSFET P-CH 250V 4.2A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF6P25

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 780pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
-2
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
Operation in This Area
is Limited by R
-V
T
vs. Temperature
J
, Junction Temperature [
DS
0
, Drain-Source Voltage [V]

Notes :
1 0
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
- 2
0
1 0
C
J
= 25
= 150
DS(on)
- 5
D = 0 .5
0 .0 2
0 .0 1
o
0 .0 5
C
o
0 .2
0 .1
50
C
DC
100 ms
Figure 11. Transient Thermal Response Curve
100
1 0
(Continued)
10 ms
o
C]
- 4
s i n g le p u ls e
10

Notes :
t
1. V
2. I
2
1 ms
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= -250  A
150
= 0 V
100 s
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
5
4
3
2
1
0
25
Figure 8. On-Resistance Variation

N o te s :
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50
DM

J C
J M
50
- T
( t) = 2 .7 8  / W M a x .
vs. Case Temperature
C
= P
T
J
vs. Temperature
T
t
, Junction Temperature [
1
C
0
D M
t
1 0
, Case Temperature [
]
2
* Z
0
75
1
/t

J C
2
( t)
50
100
1 0
1
100
o
C]

Notes :
125
1. V
2. I
150
D
GS
= -3.0 A
= -10 V
Rev. A, April 2000
150
200