FQPF3P50 Fairchild Semiconductor, FQPF3P50 Datasheet

MOSFET P-CH 500V 1.9A TO-220F

FQPF3P50

Manufacturer Part Number
FQPF3P50
Description
MOSFET P-CH 500V 1.9A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF3P50

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.9 Ohm @ 950mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
39W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FQPF3P50
Manufacturer:
FAIRCHILD
Quantity:
12 500
Price:
©2000 Fairchild Semiconductor International
FQPF3P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
C
Parameter
= 25°C)
Parameter
T
C
FQPF Series
C
C
TO-220F
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -1.9A, -500V, R
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Typ
--
--
DS(on)
G
! ! ! !
! ! ! !
-55 to +150
FQPF3P50
= 4.9
-500
0.31
-1.9
-1.2
-7.6
250
-1.9
-4.5
300
3.9
39
30
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
S
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
● ●
● ●
● ●
● ●
● ●
● ●
@V
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Max
62.5
3.2
GS
QFET
QFET
QFET
QFET
= -10 V
August 2000
Rev. A, August 2000
Units
W/°C
Units
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQPF3P50 Summary of contents

Page 1

... D FQPF3P50 Units -500 V -1.9 A -1 250 mJ -1.9 A 3.9 mJ -4.5 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 125mH -1.9A -50V ≤ -2.7A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° -500 ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1200 1000 800 600 400 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International 0 10 ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 0 10 ※ Note : T = 25℃ J ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0 -250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 2.0 1 100 ms 1.0 DC 0.5 0 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2000 Fairchild Semiconductor International TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Rev. A, August 2000 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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