FQD5N50TM Fairchild Semiconductor, FQD5N50TM Datasheet - Page 100
![MOSFET N-CH 500V 3.5A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FQD5N50TM
Manufacturer Part Number
FQD5N50TM
Description
MOSFET N-CH 500V 3.5A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQD2N30TM.pdf
(214 pages)
Specifications of FQD5N50TM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.8 Ohm @ 1.75A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
610pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Small Signal Transistors – Digital Transistors (Continued)
FJX3012R
FJX3001R
FJX3002R
FJX3003R
FJX3004R
FJX3005R
FJX3006R
FJX3007R
FJX3008R
FJX3013R
FJX3014R
FJX3015R
SOT-323 PNP Configuration
FJX4009R
FJX4010R
FJX4011R
FJX4012R
FJX4001R
FJX4002R
FJX4003R
FJX4004R
FJX4005R
FJX4006R
FJX4007R
FJX4008R
FJX4013R
FJX4014R
TO-92 NPN Configuration
FJN3309R
FJN3310R
FJN3312R
FJN3301R
FJN3302R
FJN3303R
FJN3304R
Products
V
(V)
40
50
50
50
50
50
50
50
50
50
50
50
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
50
50
50
50
CEO
V
(V)
40
50
50
50
50
50
50
50
50
50
50
50
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
50
50
50
50
CBO
V
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
EBO
5
5
5
5
5
5
5
5
Max (A)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
C
(KΩ)
4.7
4.7
2.2
4.7
2.2
4.7
4.7
4.7
2.2
4.7
4.7
4.7
R
47
10
22
47
10
22
47
10
22
47
10
22
47
10
22
47
10
47
10
22
47
1
(KΩ)
4.7
4.7
4.7
R
10
22
47
10
47
47
22
47
47
10
10
22
47
10
47
47
22
47
47
10
22
47
–
–
–
–
–
–
–
–
2
Min
100
100
100
100
100
100
100
100
20
30
56
68
30
68
68
56
68
68
33
20
30
56
68
30
68
68
56
68
68
20
30
56
68
2-95
Discrete Power Products –
Max
600
600
600
600
600
600
600
600
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
C
10
10
10
10
10
10
1
5
5
5
5
5
5
5
5
5
1
1
1
1
5
5
5
5
5
5
5
5
1
1
1
5
5
(mA)
Bipolar Transistors and JFETs
Max (V)
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(mA) @I
B
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
1
1
1
(mA)
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