FQB4P40TM Fairchild Semiconductor, FQB4P40TM Datasheet - Page 4

• Manufacturer Part Number: FQB4P40TM
• Description: MOSFET P-CH 400V 3.5A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB4P40TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.1 Ohm @ 1.75A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
10
0
, Drain-Source Voltage [V]
1 0
1 0
Operation in This Area
is Limited by R
※ Notes :
1
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 150
= 25
- 5
D = 0 . 5
0 .0 2
0 .0 1
0 .0 5
o
C
0 .2
o
0 .1
50
C
DS(on)
DC
Figure 11. Transient Thermal Response Curve
100
10 ms
10
1 0
(Continued)
2
o
- 4
C]
1 ms
s in g le p u ls e
※ Notes :
1. V
2. I
t
1
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
10
3
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
θ J C
J M
-50
DM
- T
( t ) = 1 . 4 7 ℃ /W M a x .
50
C
vs. Case Temperature
= P
T
vs. Temperature
J
T
t
D M
, Junction Temperature [
1
C
t
0
, Case Temperature [ ℃ ]
1 0
2
* Z
0
1
75
/t
θ J C
2
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -1.75 A
= -10 V
Rev. A, August 2000
200
150