HUF76629D3 Fairchild Semiconductor, HUF76629D3 Datasheet - Page 2

• Manufacturer Part Number: HUF76629D3
• Description: MOSFET N-CH 100V 20A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76629D3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1285pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Source to Drain Diode Specifications
©2001 Fairchild Semiconductor Corporation
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
PARAMETER
PARAMETER
T
GS
GS
C
= 25
= 4.5V)
= 10V)
SYMBOL
SYMBOL
o
V
r
Q
BV
t
t
Q
DS(ON)
C, Unless Otherwise Specified
t
t
d(OFF)
d(OFF)
C
C
GS(TH)
Q
R
R
I
I
d(ON)
t
d(ON)
t
g(TOT)
C
Q
Q
GSS
t
t
Q
V
DSS
OFF
OFF
g(TH)
OSS
ON
ON
RSS
g(5)
ISS
t
DSS
t
t
t
t
SD
RR
gs
gd
r
r
rr
JC
f
f
JA
I
I
V
V
V
V
I
I
I
TO-251AA and TO-252AA
V
V
(Figures 15, 21, 22)
V
V
(Figures 16, 21, 22)
V
V
V
V
f = 1MHz
(Figure 13)
I
I
I
I
D
D
D
D
D
SD
SD
SD
SD
DS
DS
GS
GS
DD
GS
DD
GS
GS
GS
GS
DS
= 250 A, V
= 250 A, V
= 20A, V
= 20A, V
= 20A, V
= 20A
= 10A
= 20A, dI
= 20A, dI
= 95V, V
= 90V, V
= 25V, V
= 16V
= V
= 50V, I
= 50V, I
= 0V to 10V
= 0V to 5V
= 0V to 1V
4.5V, R
10V,R
DS
, I
GS
GS
GS
D
D
D
GS
SD
SD
GS
GS
GS
GS
GS
GS
= 10V (Figures 9, 10)
= 5V (Figure 9)
= 4.5V (Figure 9)
= 20A
= 20A
TEST CONDITIONS
= 250 A (Figure 11)
TEST CONDITIONS
/dt = 100A/ s
/dt = 100A/ s
= 8.2
= 0V
= 0V, T
= 0V,
= 0V , T
= 0V (Figure 12)
= 6.8
V
I
I
(Figures 14, 19, 20)
D
g(REF)
C
DD
C
= 20A,
= 150
= -40
= 50V,
= 1.0mA
o
o
C
C (Figure 12)
MIN
100
MIN
90
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HUF76629D3, HUF76629D3S Rev. B
0.0415
0.046
0.047
1285
TYP
114
270
TYP
6.8
1.2
3.3
11
38
60
28
67
60
38
21
10
65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.052
0.054
0.055
MAX
MAX
1.36
1.25
1.00
250
100
190
145
190
110
370
1.6
100
50
46
25
1
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
o
o
C/W
C/W
nA
nC
nC
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A
A