FQI6N50TU Fairchild Semiconductor, FQI6N50TU Datasheet

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FQI6N50TU

Manufacturer Part Number
FQI6N50TU
Description
MOSFET N-CH 500V 5.5A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQI6N50TU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.3 Ohm @ 2.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
790pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Internation
FQB6N60 / FQI6N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings 
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
 T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 6.2A, 600V, R
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
FQI Series
I
2
-PAK
FQB6N60 / FQI6N60
DS(on)
Typ
--
--
--
-55 to +150
= 1.5
24.8
3.13
1.04
600
440
130
300
6.2
3.9
6.2
4.5
13
30
G
@V
!
!
Max
0.96
62.5
GS
40
October 2008
= 10 V
! "
! "
QFET
!
!
!
!
S
D
"
"
"
"
"
"
Units
W/°C
Units
°CW
°CW
°CW
V/ns
Rev. A1, Oct 2008
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQI6N50TU

FQI6N50TU Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Internation Features • 6.2A, 600V, R • Low gate charge ( typical 20 nC) • Low Crss ( typical 10 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 21mH 6.2A 50V 6.2A, di/dt  200A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 600 ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1400 1200 C iss 1000 C 800 oss 600 400 C rss 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International Notes : 1. 250  s Pulse Test = 10V GS = 20V Note : 0.2 Figure 4. Body Diode Forward Voltage ...

Page 4

... Figure 7. Breakdown Voltage Variation vs. Temperature 2 10 Operation in This Area is Limited by R DS(on Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0  Notes : 250  0.5 D 0.0 100 150 200 -100 100 ...

Page 5

... 3mA 3mA Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor International PAK Dimensions in Millimeters Rev. A1, Oct 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor International PAK Dimensions in Millimeters Rev. A1, Oct 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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