HUF75329G3 Fairchild Semiconductor, HUF75329G3 Datasheet

MOSFET N-CH 55V 49A TO-247

HUF75329G3

Manufacturer Part Number
HUF75329G3
Description
MOSFET N-CH 55V 49A TO-247
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75329G3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 49A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 20V
Input Capacitance (ciss) @ Vds
1060pF @ 25V
Power - Max
128W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2001 Fairchild Semiconductor Corporation
49A, 55V, 0.024 Ohm, N-Channel UltraFET
Power MOSFETs
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST.
Packaging
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
HUF75329G3
HUF75329P3
HUF75329S3S
PART NUMBER
DRAIN
(TAB)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-263AB
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
PACKAGE
Data Sheet
For severe environments, see our Automotive HUFA series.
SOURCE
75329G
75329P
75329S
DRAIN
SOURCE
BRAND
GATE
GATE
HUF75329G3, HUF75329P3, HUF75329S3S
JEDEC TO-263AB
Features
• 49A, 55V
• Ultra Low On-Resistance, r
• Temperature Compensating PSPICE® and SABER™
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
Models
- Available on the web at: www.fairchildsemi.com
- TB334, “Guidelines for Soldering Surface Mount
(FLANGE)
Components to PC Boards”
DRAIN
December 2001
(FLANGE)
DRAIN
JEDEC TO-220AB
G
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B
DS(ON)
D
S
= 0.024
SOURCE
DRAIN
GATE

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HUF75329G3 Summary of contents

Page 1

... UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND 75329G 75329P 75329S SOURCE DRAIN GATE JEDEC TO-263AB DRAIN GATE (FLANGE) SOURCE = 0.024 DS(ON JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) HUF75329G3, HUF75329P3, HUF75329S3S Rev. B ...

Page 2

... OFF 20V V g(TOT 10V g(10 g(TH) GS (Figure 13 Figure 4 Figures 6, 14, 15 128 0.86 -55 to 175 300 260 MIN TYP 150 0.020 - - - - - - - - - 30V 49A 0. 1.0mA - 2.0 g(REF HUF75329G3, HUF75329P3, HUF75329S3S Rev. B UNITS MAX UNITS - 250 A 100 0.024 o 1. C/W 105 100 2 ...

Page 3

... C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION (s) MIN TYP - 1060 - 405 - 95 MIN TYP - - - - - - 100 125 CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK HUF75329G3, HUF75329P3, HUF75329S3S Rev. B MAX UNITS - MAX UNITS 1. 120 nC 150 175 ...

Page 4

... DSS (L/R)ln[(I *R)/(1.3*RATED DSS STARTING T o STARTING T = 150 C J 0.001 0.01 0 TIME IN AVALANCHE (ms) AV PULSE TEST PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.5 3.0 4 GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS HUF75329G3, HUF75329P3, HUF75329S3S Rev + - 175 15V DD 6.0 7.5 ...

Page 5

... FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE WAVEFORMS IN DESCENDING ORDER 30V GATE CHARGE (nC 1.0 0.8 0.6 0.4 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 49A 36.75A 24. 12.25A HUF75329G3, HUF75329P3, HUF75329S3S Rev 250 120 160 200 0V 1MHz = ISS RSS OSS ...

Page 6

... FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORM d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS HUF75329G3, HUF75329P3, HUF75329S3S Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF75329G3, HUF75329P3, HUF75329S3S Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP RGATE GATE - + RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUF75329G3, HUF75329P3, HUF75329S3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75329G3, HUF75329P3, HUF75329S3S Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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